Semiconductor device and magneto-resistive sensor integration

ABSTRACT

A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction, Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set/reset circuitry for the magneto-resistive sensors, accelerometers, pressure sensors, position sensing circuitry, compassing circuitry, etc.

RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application Nos.(1) 60/475191, filed Jun. 2, 2003, entitled “Semiconductor DeviceIntegration with a Magneto-Resistive Sensor,” naming as inventors LonnyL. Berg and William F. Witcraft; (2) 60/475,175, filed Jun. 2, 2003,entitled “On-Die Set/Reset Driver for a Magneto-Resistive Sensor,”naming as inventors Mark D. Amundson and William F. Witcraft; (2)60/475191; and (3) 60/462872, filed Apr. 15, 2003, entitled “IntegratedGPS Receiver and Magneto-Resistive Sensor Device,” naming as inventorsWilliam F. Witcraft, Hong Wan, Cheisan J. Yue, and Tamara K. Bratland.The present application also incorporates each of these ProvisionalApplications in their entirety by reference herein

This application is also related to and incorporates by reference U.S.Nonprovisional Application Ser. No. 10/754945, filed concurrently,entitled “Integrated Set/Reset Driver and Magneto-Resistive Sensor,”naming as inventors Lonny L. Berg and William F. Witcraft; and U.S.Nonprovisional Application Ser. No. 10/754947, filed concurrently,entitled “Integrated GPS Receiver and Magneto-Resistive Sensor Device,”naming as inventors William F. Witcraft, Hong Wan, Cheisan J. Yue, andTamara K. Bratland.

BACKGROUND

1. Field

The present invention relates in general to magnetic field and currentsensors, and more particularly, to integrating one or more semiconductordevices with a magnetic field sensor.

2. Related Art

Magnetic field sensors have applications in magnetic compassing, ferrousmetal detection, and current sensing. They may detect magnetic fieldvariations in machine components, the earth's magnetic fields,underground minerals, or electrical devices and lines.

In these situations, one may use a magneto-resistive sensor that is ableto detect small shifts in magnetic fields. Such magneto-resistivesensors may be formed using typical integrated circuit fabricationtechniques. Typically, magneto-resistive sensors use Permalloy, aferromagnetic alloy containing nickel and iron, as the magneto-resistivematerial. Often, the Permalloy is arranged in thin strips of Permalloyfilm.

When a current is run through an individual strip, the magnetizationdirection of the strip may form an angle with the direction of currentflow. As the magnetization direction changes, the effective resistanceof the strip changes. Particularly, a magnetization direction parallelto the current flow direction results in maximum resistance through thestrip and a magnetization direction perpendicular to the current flowdirection results in minimum resistance through the strip. This changedresistance may cause a change in voltage drop across the strip when acurrent is run through the strip. This change in voltage may be measuredas an indication of change in the magnetization direction of externalmagnetic fields acting on the strip.

To form the magnetic field sensing structure of a magneto-resistivesensor, several Permalloy strips may be electrically connected together.The Permalloy strips may be placed on the substrate of themagneto-resistive sensor as a continuous resistor in a “herringbone”pattern or as a linear strip of magneto-resistive material, withconductors across the strip at an angle of 45 degrees to the long axisof the strip.

This latter configuration is known as “barber-pole biasing.” It mayforce the current in a strip to flow at a 45-degree angle to the longaxis of the strip, because of the configuration of the conductors. Thesesensing structure designs are discussed in U.S. Pat. No. 4,847,584, Jul.11, 1989, to Bharat B. Pant and assigned to the same assignee as thecurrent application. U.S. Pat. No. 4,847,584 is hereby fullyincorporated by reference. Additional patents and patent applicationsdescribing magnetic sensor technologies are set forth below, inconjunction with the discussion of FIG. 2.

Magnetic sensors often include a number of straps through which currentmay be run, for controlling and adjusting the sensing characteristics.For example, magnetic sensor designs often include set, reset, andoffset straps. Driver circuitry for these straps has typically beenlocated off-chip, resulting in space inefficiencies.

Similarly, other components, such as operational amplifiers,transistors, capacitors, etc., have typically been implemented on aseparate chip from the magnetic sensor. For example, signal conditioningand electrostatic discharge circuitry is typically located off-chip.While this may be fine for some applications, for others, in whichphysical space is at a premium, it would be desirable to have one ormore of these semiconductor components as part of the same chip as themagnetic sensor. Thus a single-chip design would be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the present inventions are described withreference to the following drawings, wherein like reference numeralsrefer to like elements in the various figures, and wherein:

FIGS. 1A–1D are simplified block diagrams illustrating exemplaryembodiments;

FIG. 2 is a diagram illustrating magneto-resistive sensor havingintegrated semiconductor underlayers in accordance with an exemplaryembodiment;

FIG. 3 is a diagram illustrating a magneto-resistive sensor with a MIMcapacitor in accordance with an exemplary embodiment;

FIG. 4 is a plan view of a magneto-resistive sensor with semiconductorcomponents in accordance with an exemplary embodiment;

FIG. 5 is a first circuit diagram illustrating an integrated positionsensor in accordance with an exemplary embodiment;

FIG. 6 is a second circuit diagram illustrating a first compassingcircuit integrated with a magneto-resistive sensor in accordance with anexemplary embodiment; and

FIG. 7 is a third circuit diagram illustrating a second compassingcircuit integrated with a magneto-resistive sensor in accordance with anexemplary embodiment.

DETAILED DESCRIPTION

In view of the wide variety of embodiments to which the principles ofthe present invention can be applied, it should be understood that theillustrated embodiments are exemplary only, and should not be taken aslimiting the scope of the present invention.

Exemplary Architecture

FIGS. 1A–1B are simplified block diagrams illustrating integration of asemiconductor device with one or more magneto-resistive sensingelements. The device 100 includes a first portion 102, including themagneto-resistive sensing elements (hereinafter collectively referred toas an “MR sensor”) and wiring (such as thin-film traces), and a secondportion 104, including one or more semiconductor device components. In apreferred embodiment, the second portion 104 also includes signalconditioning circuitry and circuitry for ESD (Electro-Static Discharge)protection for the MR sensor in the first portion 102. As discussedbelow, the second portion 104 is particularly amenable to standardsemiconductor fabrication techniques, such as those used for CMOS(Complementary Metal Oxide Semiconductor).

The first and second portions 102, 104 are included within the samechip, so that the device 100 is a discrete, one-chip design. Priorattempts to integrate semiconductor devices with MR sensors havetypically involved at least two die, placed separately on a printedcircuit board, which likely results in a larger-sized end-user device(e.g. cell phone, portable device, watch, automotive sensor, etc.) andincreased complexity. The one-chip design of device 100 provides reducedsize and added functionality.

The first and second portions 102, 104 may be manufactured usingstandard RF/microwave processes, such as CMOS, Bipolar, BiCMOS, GaAs(Gallium Arsenide), and InP (Indium Phosphide), for example. While atechnology like GaAs may provide advantages in operational speed,reduced power consumption might best be realized through the use ofother techniques, such as those involving SOI (Silicon on Insulator) orMOI (Microwave-On-Insulator), a variation of SOI. In one embodiment, aSOI 0.35μ processing is used.

In a preferred embodiment, the first portion 102 is manufactured usingstandard lithography, metallization, and etch processes, such as thoseset forth in the list of patents incorporated by reference below. Othertechniques for manufacturing the MR sensor may also be used, however.The second portion 104 is preferably manufactured using the SOI 0.35μprocessing, or another RF/microwave method, such as GaAs processing.

Integrating the MR sensor with the one or more semiconductor devicecomponents may be accomplished in one of at least two ways. In a firstembodiment, the MR sensor can be fabricated on the same die as thesemiconductor device components, and may include other circuitry, suchas signal conditioning and ESD protection circuitry. In a secondembodiment, the MR sensor is fabricated on a first die, while at leastsome of the semiconductor device components are fabricated on a seconddie. The first and second die may then be placed in close proximity toone another and may be packaged within a single integrated circuit chip.In either case, it may be advantageous to include one or moreconnections between the semiconductor device components and the MRsensor depending on the particular application. For example, suchconnections could provide feedback. Alternatively, the semiconductordevice components and MR sensor may be simply physically close to oneanother, but with no intentional electrical interaction.

Because conventional semiconductor processing techniques may be used,the particular semiconductor device circuitry is not disclosed herein,as it is flexible. Thus, conventional semiconductor designsimplementable in CMOS/Bipolar/BiCMOS, can be utilized in accordance withthe presently disclosed embodiments. Exemplary semiconductor devicesthat might be implemented include, without limitation, capacitors,inductors, operational amplifiers, sevreset circuitry for the MRsensors, accelerometers, pressure sensors, position sensing circuitry,compassing circuitry, etc.

Some semiconductor device components may generate electromagnetic fieldssignificant enough to influence operation of the MR sensor. Thus, thesensitive parts of the MR sensor portion 102 of the integrated device100 may need to be physically separated from parts of the semiconductordevice portion 104 in order to provide optimal sensor operation. Theamount of separation may be determined using theoretical or empiricalmeans, for example.

As an alternative to introducing a physical separation betweenpotentially interfering parts of the integrated device 100, a shieldinglayer may be provided. FIGS. 1B–1D illustrate three exemplaryconfigurations for such a shield. In FIG. 1B, a shielding layer 106 islocated substantially between the first portion 102 and the secondportion 104. The shielding layer 106 may extend over some or the entireinterface between the first and second portions 102, 104, depending oncharacteristics of the electromagnetic fields and the location ofsensitive components. FIG. 1C shows a shielding layer 108 located withinthe second portion 104. FIG. 1D shows a localized shield 110, whichmight be beneficial where the majority of the magnetic field effectsoriginate from a relatively small part of the second portion 104. Theshield 110, may also be advantageous in designs having electricalconnections between the first and second portions 102, 104. Use of ashielding layer or shield will likely allow tighter integration of thedevice 100 than with physical separation of sensitive parts. While sucha shielding layer or shield may comprise metal or magnetic (e.g. NiFefilm), other materials may also be suitable.

Exemplary Fabrication Techniques

FIG. 2 illustrates an exemplary cross section of a device 200, in whichone or more semiconductor components may be implemented with a MRsensor. For purposes of this example, CMOS/Bipolar semiconductortechnologies will be assumed. The semiconductor device components(perhaps along with any signal conditioning circuitry and drivers forset and/or offset straps associated with the MR sensor portion) may befabricated largely within CMOS/Bipolar underlayers 210, while the MRsensor may be fabricated in the layers 202–206 above the contact glasslayer 208. Also shown in FIG. 2 are various contacts V1–V3 andmetallizations M1–M3, and NiFe Permalloy structures (see the 1^(st)dielectric layer 206).

Besides the underlayers 210, the contact glass layer 208, and the 1^(st)dielectric layer, 206, also shown are a second dielectric layer 204, anda passivation layer 202. In one embodiment, layers 202–206 are formedusing standard lithography, metallization, and etch processes, whilelayers 208–210 are formed using the SOI 0.35μ processing, or anotherRF/microwave method, such as GaAs processing. Other components of the MRsensor (such as set, reset, and offset straps; signal conditioningcircuitry, and ESD protection circuitry) may be included in variouslocations in the layers 206–210, and are not fully illustrated in FIG.2.

Exemplary Magneto-Resistive Designs

For further information on MR sensor designs, reference may be made tothe following Honeywell patents and/or patent applications, all of whichare incorporated by reference herein:

U.S. Pat. No. 6,529,114, Bohlinger et al., “Magnetic Field SensingDevice”

U.S. Pat. No. 6,232,776, Pant et al., “Magnetic Field Sensor forIsotropically Sensing an Incident Magnetic Field in a Sensor Plane”

U.S. Pat. No. 5,952,825, Wan, “Magnetic Field Sensing Device HavingIntegral Coils for Producing Magnetic Fields”

U.S. Pat. No. 5,820,924, Witcraft et al., “Method of Fabricating aMagnetoresistive Sensor”

U.S. Pat. No. 5,247,278, Pant et al., “Magnetic Field Sensing Device”

U.S. patent application Ser. No. 09/947,733, Witcraft et al., “Methodand System for Improving the Efficiency of the Set and Offset Straps ona Magnetic Sensor”

U.S. patent application Ser. No. 10/002,454, Wan et al., “360-DegreeRotary Position Sensor”

In addition, U.S. Pat. No. 5,521,501, to Dettmann et al., titled“Magnetic field sensor constructed from a remagnetization line and onemagnetoresistive resistor or a plurality of magnetoresistive resistors”is also incorporated herein by reference, and may provide additionaldetails on constructing a MR sensor.

Exemplary Metal-Insulator-Metal Capacitor Integration

FIG. 3 illustrates a particular application of integrating asemiconductor device with a MR sensor. The device 200 of FIG. 3 includesmany or all of the components illustrated in FIG. 2, with the additionof a Metal-Insulator-Metal (MIM) capacitor 350 shown in the firstdielectric layer 206. In addition, the contact V1 adjacent to the MIMcapacitor 350 is adjusted accordingly to provide the desired contactpoints. As shown, the MIM capacitor 350 is located between the contactV1 and a nitride layer overlaying low-resistivity metallization M1.While the MIM capacitor 350 is shown located in the first dielectriclayer 206, it could alternatively be in other locations, such as in thepassivation layer 202, second dielectric layer 204, or in theCMOS/Bipolar underlayers 210. The integrated MIM capacitor is animprovement over the linear capacitors utilized with prior MR sensorsdue to its reduced size, possibly resulting in a smaller overallpackage.

The device 200 is a preferred architecture for a MR sensor, and otherarchitectures, having different Permalloy placements and structurescould be used instead. In yet another embodiment, the MIM capacitor 350could be included in the device 200, and the CMOS/Bipolar underlayers210 could be omitted or replaced with some other base or substratematerial.

Exemplary Semiconductor Circuitry Integration

FIG. 4 is a plan view of one embodiment of a device 300 in which one ormore semiconductor devices are integrated with a MR sensor. Thestructures visible in FIG. 3 are attributable largely to the MR sensor(and other circuitry, such as sevoffset drivers or magnetic sensorsignal conditioning circuitry) formed in the underlayers of the device300. Exemplary parts of the device 300 include a magneto-resistivebridge 301, set/reset straps 302, offset straps 304, sevreset circuitry306–308, laser trim sites 310 (for matching impedance of the legs of thebridge 301), ESD protection diode 312, MIM capacitors 314, operationalamplifiers 316, contacts 318, and test sites 320. Reference may be madeto the patents and patent applications incorporated above for furtherinformation.

FIGS. 5–7 are simplified circuit diagrams illustrating examples of thetypes of semiconductor circuitry that may be integrated with a MRsensor. These exemplary diagrams are not intended to be an exhausting orinflexible list of circuitry that may be integrated with or integral tothe MR sensor, but rather to illustrate the breadth of circuitry thatmay be so integrated.

FIG. 5 is a simplified circuit diagram 500 illustrating an integratedposition sensor. The integrated position senor may be asaturated-mode-type sensor in which position or direction, but not theintensity, of a magnetic field of a device may be detected. Theintegrated position sensor may employ a position-sensing circuit 502integrated with a MR sensor 504 along with an externally-placed,bias-magnetic-field generator 506. The bias-magnetic-field generator506, however, may be placed in close proximity to the integratedposition-sensing circuit 502 and MR sensor 504.

The bias-magnetic-field generator 506 may be, for example, a permanentmagnetic, an electro-magnetic, an anisotropic or giant magneto-resistivesensor, or other device capable of creating and maintaining magneticfield. In a preferred embodiment, the bias-magnetic-field generator 506may be a permanent magnetic applying a linear or angular magnetic fieldgreater than about 80 gauss. The magnetic-field generated, however, maybe greater than or less than this exemplary value.

The position-sensing circuit 502 may include a difference amplifier 508.The difference amplifier 508 may be deployed with adjustable offset andgain. The adjustable offset and gain may be deployed in the same packageas the other circuitry, and in the form of laser trimable components,for instance. Alternatively, the adjustable offset and gain or broughtoutside the package for use with external controls, such as a simpleparallel resistor circuit or more sophisticated regulation and/or trimcircuitry. The adjustable offset and gain may be beneficially employedto compensate and/or negate undesirable changes in the MR sensor 504.

The position-sensing circuit 502 may also include temperaturecompensation circuitry (not shown) to oppose adverse temperature effectsof the MR sensor. The temperature-compensation may be, for example, inthe form of a thermistor, a Permalloy element, and/or active-regulationcircuitry. The active regulation circuitry may sense a change, i.e., areduction or increase in voltage or current, due to temperature effectsand then provide compensation in the form of current and/or voltage inresponse. The position sensing circuit 502 may include other elements aswell.

FIG. 6 is a simplified circuit diagram 600 illustrating a compassingcircuit 602 integrated with the MR sensor. In this embodiment, the MRsensor may be formed from first and second magneto-resistive-sensingelements 604, 605 that can sense orthogonal magnetic fields. In athree-dimensional coordinate system, for example, the firstmagneto-resistive-sensing element 604 may sense magnetic fields in the“X” direction, whereas the second magneto-resistive-sensing element 605may sense magnetic fields in the “Y” direction. The X-Y planes, ofcourse, may rotate through the coordinate system.

The compassing circuit 602 may include first and second differenceamplifiers 608, 610 for the first and second magneto-resistive-sensingelements 604, 605, respectively. Like the position-sensing circuit 502,each of the difference amplifiers 608, 610 may be deployed withadjustable offset and gain to beneficially compensate and/or negateundesirable changes in the magneto-resistive elements 604, 605. Thecompassing circuit 602 may include temperature compensation circuitry,such as described above, to oppose adverse temperature effects of the MRsensor.

FIG. 7 is a simplified circuit diagram 700 illustrating a secondcompassing circuit 702 integrated with the MR sensor. In thisembodiment, the MR sensor may be formed from first, second and thirdmagneto-resistive-sensing elements 704–706 that can sense threeorthogonal magnetic fields. The first and second magneto-resistivesensing elements 704, 705 may be fabricated on a first die, while thethird magneto-resistive sensing element 706 may be on a second die. Thesecond die may or may not be packaged with the first and secondmagneto-resistive sensing elements 704, 705.

In a three-dimensional coordinate system, the firstmagneto-resistive-sensing element 704 may sense magnetic fields in the“X” direction, whereas the second magneto-resistive-sensing element 705may sense magnetic fields in the “Y” direction. The thirdmagneto-resistive-sensing element 706 may sense magnetic fields in the“Z” direction. The compassing circuit 702 may include first, second andthree difference amplifiers 608–612 for the first, second and thirdmagneto-resistive-sensing elements 704–706, respectively. All three ofthe difference amplifiers 708–710 may be fabricated on the first die.

Like the position-sensing circuit 502, each of the difference amplifiers708–712 may be deployed with adjustable offset and gain to beneficiallycompensate and/or negate undesirable changes in the magneto-resistiveelements 704–706. The compassing circuit 702 may include temperaturecompensation circuitry, such as described above, to oppose adversetemperature effects of the MR sensor.

Exemplary Process for Integrating Semiconductor Components with MRSensor.

Table 1, below, shows a simplified exemplary process for integrating oneor more semiconductor device components with a MR sensor. It is believedthat such a process is unique because, in the past, semiconductorfoundries have gone to great lengths to prevent contamination of theirprocesses with materials typically used in manufacturing magneticsensors. In addition, companies in the magnetic industries (e.g. diskdrive head manufacturers, etc.) have been separate from electronicscompanies, and their specialized manufacturing techniques have been keptlargely separate from one another.

TABLE 1 Sample Manufacturing Process Clean Wafer Oxide and Nitridediffusion, lithography, etch, clean (device-specific structuring)Boron/Phosphorous implants (if any), clean (end front-end processing;begin back-end processing) Deposit contact glass (if any), reflowDevice-specific structuring Metallizations, deposit and structuredielectrics (device-specific structuring) Inspection and evaluation

In a preferred embodiment, the semiconductor device processing is doneat the front end, while the lithography and etch steps associated withmaking the MR sensor are done at the back end. Table 1 is intended to begenerally applicable to many MR sensor manufacturing processes, and thusdoes not include detail on how to obtain particular architectures. Thearchitectures shown in FIGS. 2 and 3 would involve several iterations ofthe backend steps to obtain the multiple layers of dielectrics andmetallizations. Of course, additional cleaning and other steps should beimplemented as appropriate.

CONCLUSION

Exemplary embodiments of a device using having one or more semiconductorcomponents integrated with a MR sensor device and exemplary processingoptions have been described. Because such an integrated device may bemanufactured as a single chip, the user may realize advantages thatinclude cost reduction, reduced size and increased functionality, amongothers.

In the foregoing detailed description, numerous specific details are setforth in order to provide a thorough understanding of exemplaryembodiments described herein. However, it will be understood that theseembodiments may be practiced without the specific details. In otherinstances, well-known methods, procedures, components and circuits havenot been described in detail, so as not to obscure the followingdescription.

Further, the embodiments disclosed are for exemplary purposes only andother embodiments may be employed in lieu of or in combination with ofthe embodiments disclosed. Moreover, it is contemplated that theabove-described apparatus and components may be fabricated usingSilicon/Gallium Arsenide (Si/GaAs), Silicon/Germanium (SiGe), and/orSilicon/Carbide (SiC) fabricating techniques in addition to theabove-described techniques. Included amongst these techniques areHeterojunction Bipolar Transistor (HBT) fabrication processes, and/orMetal Semiconductor Field Effect Transistor (MESFET) fabricationprocesses.

The exemplary embodiments described herein may be deployed in variousequipment and other devices, which may include or be utilized with anyappropriate voltage source, such as a battery, an alternator and thelike, providing any appropriate voltage, such as about 0.4, 5, 10, 12,24 and 48 Volts DC, and about 24, and 120 Volts AC and the like.

Further, the claims should not be read as limited to the described orderor elements unless stated to that effect. In addition, use of the term“means” in any claim is intended to invoke 35 U.S.C. §112, 6, and anyclaim without the word “means” is not so intended.

1. A single-package sensing apparatus comprising: semiconductor circuitry farmed on a chip: a magneto-resistive sensor formed over the semiconductor circuitry; and a metal-insulator-metal capacitor formed adjacent to the magneto-resistive sensor on the same chip.
 2. The sensing apparatus of claim 1, further comprising a shield disposed between the semiconductor circuitry and tie magneto-resistive sensor.
 3. The sensing apparatus of claim 2, wherein the shield comprises a material selected from the group consisting of metal and magnetic materials.
 4. The sensing apparatus of claim 2, wherein the shield is adapted to prevent the semiconductor circuitry from undesirably affecting an operation of the magneto-resistive sensor.
 5. The sensing apparatus of claim 1, further comprising a dielectric disposed between the semiconductor circuitry and the magneto-resistive sensor, and a shield disposed in the dielectric.
 6. The sensing apparatus of claim 5, wherein the shield is adapted to prevent the semiconductor circuitry from undesirably affecting an operation of the magneto-resistive sensor.
 7. A monolithically formed sensing apparatus comprising; a first part having semiconductor circuitry disposed thereon; a second part having a magneto-resistive sensor disposed thereon; a dielectric layer disposed between said first and second parts; wherein the first part is fabricated before the second part, wherein the second part comprises: magneto-resistive structures; at least one first metallization; at least one first contact coupled to the at least one first metallization; a second dielectric layer disposed over at least the dielectric layer; at least one second metallization coupled to the at least one first contact; at least one second contact coupled to the at least one second metallization; a third dielectric layer disposed over at least the second dielectric layer; at least one third metallization coupled to the at least one second contact; at least one third contact coupled to the at least one third metallization; and a fourth dielectric layer disposed over at least the third dielectric layer.
 8. The sensing apparatus of claim 7, wherein the dielectric layer is formed over the first part before the second part is formed.
 9. The sensing apparatus of claim 7, wherein the first part is formed using any of Complementary-Metal-Oxide-Semiconductor(CMOS), bipolar, Gallium-Arsenide, Germanium, bipolarCMOS (BiCMOS), and Indium Phosphide (InP), and Silicon-On-Insulator (SOI) technologies.
 10. The sensing apparatus of claim 7, wherein the second part further comprises a metal-insulator-metal capacitor disposed between the at least one first metallization and the at least one first contact.
 11. The sensing apparatus of claim 7, wherein the dielectric comprises contact glass, and wherein the contact glass comprises a material selected from the group consisting of silicon-nitride (Si3N4) borophosillicate glass (BPSG), and silicon-oxide (SiO2).
 12. A method at making a sensing apparatus, the method comprising forming semiconductor circuitry; forming a magneto-resistive sensor over the semiconductor circuitry; and forming a metal-insulator-metal capacitor within layers forming the magneto-resistive sensor, wherein the semiconductor circuitry and magneto-resistive sensor are formed into a single package.
 13. The method of claim 12, wherein the steps of forming semiconductor circuitry and forming a magneto-resistive sensor over the semiconductor circuitry comprises forming the semiconductor circuitry physically separate from the magneto-resistive sensor to prevent undesired interaction between the semiconductor circuitry and magneto-resistive sensor.
 14. The method of claim 12, further comprising forging a shield between the semiconductor circuitry and the magneto-resistive sensor. 